LEPL Institute of Micro and Nanoelectronics

LEPL Institute of Micro and Nanoelectronics has a long-standing experience, know-how and facilities for R & D in III-V technology. 25 years of investigations, development and production to the orders of the Military-Industrial Complex of the former Soviet Union. Developments of RF Gunn diodes, p-n diodes, field-effect transistors (FET's), high electron mobility transistors (HEMT's) as well as integrated circuits (IC's). Facilities including design, processing, packaging, and testing of III-V semiconductor devices and ICs are unique for Georgia and present an excellent platform for training of graduate students and other personnel.

Role of the organisation in the project:

In WP1 P17 will take part in e-surveys, and drafting training requirements. In WP4 it will participate in training holding by P1, provide employees for pilot training and workshop for future trainers executed by P9, build mutually beneficial and sustainable partnership and internship program with P9. In WP5 it will evaluate trainings and learning modules, observe the modules design and implementation, and suggest details about contents/methodology. The employees will participate in Certification program. In WP6 it will participate in dissemination activities by using own already established information facilities, and planning of activities after project lifetime. In WP7 P17 will provide reports, communicate with the coordinator (P1), participate in final conference/meeting(Spain) and via video/phone in other meetings.

Contact person: 

Mr. Kakha Chitaia

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